Planar Avalanche Photodiode for Long-Haul Single-Photon Optic Fiber Communications

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2008-01-25

著者

• Tokuda Y

  Mitsubishi Electric Corp. Hyogo Jpn

• Tokuda Yasunori

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Tokuda Yasunori

  Central Research Laboratory Mitsubishi Electric Corporation

• MATSUI Mitsuru

  Information Technology R&D Laboratories, Mitsubishi Electric Corporation

• YAGYU Eiji

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• SUGIHARA Kohei

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• NISHIOKA Tsuyoshi

  Information Technology R&D Center, Mitsubishi Electric Corporation

• YOSHIARA Kiichi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• Yoshiara Kiichi

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Yoshiara Kiichi

  Advanced Technology R&d Center Mitsubishi Electric Corp.

• Tokuda Yasunori

  Advanced R&d Technology Center Mitsubishi Electric Corporation

• Matsui Mitsuru

  Information Technology R&d Center Mitsubishi Electric Corporation

• Sugihara Kohei

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Yagyu Eiji

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Nishioka Tsuyoshi

  Information Technology R&d Center Mitsubishi Electric Corporation

関連論文

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• Selective Epitaxial Growth by Ultrahigh-Vacuum Chemical Vapor Deposition with Alternating Gas Supply of Si_2H_6 and Cl_2
• Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping
• First Operation of AlGaN Channel High Electron Mobility Transistors
• First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation
• How to Maximize Software Performance of Symmetric Primitives on Pentium III and 4(Symmetric Key Cryptography, Cryptography and Information Security)
• Planar Avalanche Photodiode for Long-Haul Single-Photon Optic Fiber Communications
• Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors
• Carrier-Temperature and Wavelength-Switching in GaAs Single-Quantum-Well Baser Diode
• On the Origin of Oval Defect with Nucleus on Epilayers Grown by Molecular Beam Epitaxy
• Very High Frequency Self-Pulsation and Stable Optical Injection Locking for Well-Defined Multi-Electrode Distributed Feedback Lasers
• Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
• Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films
• Fabrication of Terahertz Planar Metamaterials Using a Super-Fine Ink-Jet Printer
• An Experimental Realization of Quantum Cryptosystem(Special Section on Cryptography and Information Security)
• A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
• Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
• Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies
• Advantage of Shallow Trench Isolation over Local Oxidation of Silicon on Alignment Tolerance
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• Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
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• Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs
• Anomalous Gate Length Dependence of Threshold Voltage of Trench-Isolated Metal Oxide Semiconductor Field Effect Transistors
• Narrow-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET)Isolated by an Ultra-Fine Trench
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• Step-Promoted Surface Reconstruction on Ga-Deposited (100) GaAs During Molecular Beam Epitaxy with Alternating Supply of Ga and As
• Room-Temperature Self-Electrooptic Effects of GaAs/AlAs Asymmetric Coupled Quantum Wells
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• Fast Software Implementations of MISTY1 on Alpha Processors (Special Section on Cryptography and Information Security)
• Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
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• FOREWORD
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• Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition
• Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition

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