Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
The relation between As ion implantation and Si-selective epitaxy is investigated, taking account of the application of ultrahigh vacuum chemical vapor deposition to LSI devices. For a non-implanted wafer, undesirable island-like growth occurred because oxygen was introduced into the Si substrate by previous etching processes. The implantation of a sufficient dosage of As ions restored layer-by-layer growth with excellent surface morphology, which is explained in terms of the removal of the disturbed layer by the additional sputtering effect of ion implantation.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1999-09-15
著者
-
Tokuda Yasunori
Advanced R&d Technology Center Mitsubishi Electric Corporation
-
Maruno Shigemitsu
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Furukawa Taisuke
Advanced Technology R&D Center, Mitsubishi Electric Co., 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
-
Furukawa Taisuke
Advanced Technology R&D Center, Mitsubishi Electric Corporation,
-
Nakahata Takumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation,
-
Satoh Shinichi
Advanced Technology R&D Center, Mitsubishi Electric Corporation,
-
Maruno Shigemitsu
Advanced Technology R&D Center, Mitsubishi Electric Corporation,
関連論文
- Effects of Oxygen Vacancy Diffusion on Leakage Characteristics of Pt/(Ba_Sr_)TiO_3/Pt Capacitor
- Optical 3R Wavelength Conversion by a combination of Self-pulsating DFB Laser and SOA-based Mach-Zehnder Interferometer
- Selective Epitaxial Growth by Ultrahigh-Vacuum Chemical Vapor Deposition with Alternating Gas Supply of Si_2H_6 and Cl_2
- Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping
- First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation
- Planar Avalanche Photodiode for Long-Haul Single-Photon Optic Fiber Communications
- Carrier-Temperature and Wavelength-Switching in GaAs Single-Quantum-Well Baser Diode
- On the Origin of Oval Defect with Nucleus on Epilayers Grown by Molecular Beam Epitaxy
- Very High Frequency Self-Pulsation and Stable Optical Injection Locking for Well-Defined Multi-Electrode Distributed Feedback Lasers
- Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
- Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films
- Fabrication of Terahertz Planar Metamaterials Using a Super-Fine Ink-Jet Printer
- A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
- Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
- Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies
- Advantage of Shallow Trench Isolation over Local Oxidation of Silicon on Alignment Tolerance
- Protection of Field Oxide in Trench Isolation against Contact Hole Etching to Improve Alignment Tolerance
- Surface Defect Formation in Epitaxial Si Grown on Boron-Doped Substrates by Ultrahigh Vacuum Chemical Vapor Deposition(Structure and Mechanical and Thermal Properties of Condensed Matter)
- Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition
- Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition
- Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs
- Anomalous Gate Length Dependence of Threshold Voltage of Trench-Isolated Metal Oxide Semiconductor Field Effect Transistors
- Narrow-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET)Isolated by an Ultra-Fine Trench
- Electrical Characteristics of Ultra-Fine Trench Isolation Fabricated by a New Two-Step Filling Process
- Step-Promoted Surface Reconstruction on Ga-Deposited (100) GaAs During Molecular Beam Epitaxy with Alternating Supply of Ga and As
- Room-Temperature Self-Electrooptic Effects of GaAs/AlAs Asymmetric Coupled Quantum Wells
- Photoluminescence of a Novel Hetero n-i-p-i Structure Incorporating Triple Quantum Wells
- Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
- A Chemical Mechanism for Determining the Influence of Boron on Silicon Epltaxial Growth : Semiconductors
- Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
- First Operation of AlGaN Channel High Electron Mobility Transistors
- Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors
- Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition
- Lasing Mechanism Analysis of Self-Pulsating Distributed Feedback Laser Diodes and Successful Demonstration of All-Optical Signal Recovery at 40 Gbps
- X-ray Photoelectron Spectroscopy Study of the Origin of the Improved Device Performance by a Thin Al Layer Insertion between AlGaN and Schottky Gate on the AlGaN/GaN High-Electron-Mobility Transistor
- A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
- All-Optical Clock Recovery and Wavelength Conversion by Combination of Self-Pulsation Laser and Semiconductor-Optical-Amplifier-Based Mach–Zehnder Interferometer
- Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition
- Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition