Carrier-Temperature and Wavelength-Switching in GaAs Single-Quantum-Well Baser Diode

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1986-11-20

著者

• Tokuda Y

  Mitsubishi Electric Corp. Hyogo Jpn

• Tokuda Yasunori

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Tokuda Yasunori

  Central Research Laboratory Mitsubishi Electric Corporation

• FUJIWARA Kozo

  Institute for Materials Research (IMR), Tohoku University

• HAMANAKA Koichi

  Central Research Laboratory, Mitsubishi Electric Corporation

• TSUKADA Noriaki

  Central Research Laboratory, Mitsubishi Electric Corporation

• FUJIWARA Kenzo

  Central Research Laboratory, Mitsubishi Electric Corporation

• KOJIMA Keisuke

  Central Research Laboratory, Mitsubishi Electric Corporation

• NAKAYAMA Takashi

  Central Research Laboratory, Mitsubishi Electric Corporation

• Fujiwara K

  Institute For Materials Research (imr) Tohoku University

• Fujiwara Kenzo

  Central Research Laboratory Mitsubishi Electric Corporation

• Kojima Keisuke

  Central Research Laboratory Mitsubishi Electric Corporation

• Kojima Keisuke

  Central Reseach Laboratory Mitsubishi Electric Corporation

• Tokuda Yasunori

  Advanced R&d Technology Center Mitsubishi Electric Corporation

• Nakayama T

  Chiba Univ. Chiba Jpn

• Tsukada N

  Aomori Univ. Aomori Jpn

• Tsukada Noriaki

  Central Research Lab. Mitsubishi Electric Corp.

• Hamanaka Koichi

  Central Research Laboratory Mitsubishi Electric Corporation

• NAKAYAMA Takashi

  Department of Physics, Faculty of Science, Chiba University

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