Effects of Interface Atomic Configurations on Electronic Structures of Semiconductor Superlattices
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概要
- 論文の詳細を見る
The electronic structures are calculated using the semiempirical sp^3s^* tight-binding method for [001] GaAs/ZnSe and GaAs/AlAs semiconductor superlattices which have several structures at the interface. The results of calculation show that in GaAs/ZnSe superlattices electrons and holes are localized around donor (Ga-Se) and acceptor (Zn-As) bonds at the interface, respectively, and that the band-gap energy changes largely (∼ 0.3 eV) with varying configuration of donor and acceptor bonds. In GaAs/AlAs superlattices, bacause the difference in ionicity between GaAs and AlAs is small, there is little difference in the electronic structures between superlattices with various interface structures.
- 社団法人応用物理学会の論文
- 1992-08-15
著者
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Oda Katsuya
Department Of Physics Faculty Of Science Chiba University:(present Address) Central Research Laborat
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Nakayama T
Chiba Univ. Chiba Jpn
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Nakayama Takashi
Department Of Biopharmaceutics Graduate School Of Pharmaceutical Sciences Osaka University:crest (co
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Nakayama Takashi
Department Of Biochemistry I Yokohama City University School Of Medicine
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NAKAYAMA Takashi
Department of Physics, Faculty of Science, Chiba University
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