Stacking and Optical Properties of Layered In_2Se_3
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概要
- 論文の詳細を見る
Electronic structures and optical properties of layered In_2Se_3 with various stackings have been studied using ab initio calculation. It is found that since the dangling-bond states of layer-edge Se atoms appear at the top of the valence band, the absorption around the fundamental band gap becomes large for light polarization along the layer direction. This property is common to all stackings and explains well the results of a recent experiment.
- 社団法人応用物理学会の論文
- 1998-10-01
著者
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Ishikawa Masato
Department Of Physics Faculty Of Science Chiba University
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Nakayama Takashi
Department Of Biochemistry I Yokohama City University School Of Medicine
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