Atomic and Electronic Structures of Stair-Rod Dislocations in Si and GaAs
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概要
- 論文の詳細を見る
Atomic and electronic structures of stair-rod dislocations in Si and GaAs films are studied using the first-principles calculations. It is shown that the stair-rod dislocation shows the dimer-bond reconstruction in the core region and that there are two types of dimer-array configurations, parallel and zigzag dimer structures. The bonding and antibonding states originating from these dimer bonds are embedded in valence and conduction bands in the case of Si, while they appear as partially occupied midgap bands and act as carrier traps in the case of GaAs. We found that the adjacent dimer bonds in GaAs have different lengths on different partial dislocation lines in order to stabilize the electronic band energy.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-06-25
著者
-
Kobayashi Ryo
Graduate School Of Engineering Nagoya Institute Of Technology
-
Nakayama Takashi
Department Of Biochemistry I Yokohama City University School Of Medicine
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Kobayashi Ryo
Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa, Nagoya 466-8555, Japan
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