Electronic Structures of Heteto-Crystalline Semiconductor Superlattices
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概要
- 論文の詳細を見る
Crystal structures of lvetero-crystalliuae superlattices made of xnatea'ials w'itladifferent crystalline structures are proposed and band structures of (lvexagonal-dia-mond Si)/(cubic-diamond Si) and (wurzite ZnS)/(ziuac-blend ZnS) superlrtttices arecalculated using the first-princij>les pseudopotential method w'ithixa the ]oc?tl-deuasityapproximation. It is slaow'n that Si superlattices laave indirect lcand gaps of energyaround 1.1 eV, xvhile ZIIS superlattices ltave direct band gaps of energy an'ound 3.8eV. In both superlattices, tlte states around tlte fundamental 82[P SIIOW cltarge den-sities localized in one constituent layers, ixtdicating that these superlattices give quan-turn well systems of good quality. Band ofl'sets are also ex'aluated.hetero-crystalline superlattice, xvurzite, ziuac-blend, )vseudopotential, LDA, Si,ZIIS, band folding, pseudo-direct, confi?aenaent, quantuxn xvell, band offset
- 社団法人日本物理学会の論文
- 1992-07-15
著者
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Murayama Misao
Department Of Electronics Engineering The University Of Electro-communications
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Murayama Misao
Department Of Physics Faculty Of Science Chiba University
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Nakayama Takashi
Department Of Biochemistry I Yokohama City University School Of Medicine
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Nakayama Takashi
Department Of Physics Faculty Of Science Chiba University
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