Electronic Structures of Heterovalent(001) Semiconductor Superlattices: GaP/ZnS and GaAs/ZnSe
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Electronic structures of GaP /ZnS and GaAs /ZnSe (001 ) Iteterovalertt sujcerlatticeswitlt differeutt interface configuratiotas are calculated by tlae first-)criutcijclespseudopotential xavc:thod. As for superlaltices xvith jclane iuaterfaces, it is shown t1aa[tlcc appearance of ixaterface states naakes [laese systertas direct-gap t)')ce-II semicoxadttc-tors auad SIIONX'S large anisotropy iut the conductive and optical )ox-operties. Moreoverlarge lattice relaxation is expected to occur at live imtterface. In sujcex'lattices xx'itlaclaarge-couavpensated interfaces, 811 electric field ru??s along tlte iutterface arad a quan-tuun xvell picture is applicable to the states around tlte funda?mettta[ gap. Hoxvever tltecalculated band offsets are strongly dependent 011 tlte x'alextcy of imaterface atom?as,soxne of wlaiclt is corn)cared w'utla expervxaaents.[heterovaIextt, superlattice, interface, donor bond, accejctor bond, band offset, ll qttanturn well, pseudo)cotentiall
- 一般社団法人日本物理学会の論文
- 1992-07-15
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