Multi-Quantum-Well Effects on Electronic Structures and Optical Properties of GaP/AlP Superlattice
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概要
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The electronic structure and optical transition strengths of the (GaP)... (ALP)... (GaP).,...(AIP).. = - = type multi-quantum-well superlattices (MQS's) are c;tlculated with use of the abinitio psetrdopotential method within the local density approxim?ttion. It is shown that tirethickest layers of GaP and ALP are a dominant factor of determinirrg band-gap energy of IVIQS,while other thin "spacer" layers critically change the transition strengths. Especially, the strongtransition strength is obtained when the spacer consists of thinner GaP and AIP layers. Excitoniceffect on the photoluminescence is briefly discussed.
- 1996-11-15
著者
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Nakayama Takashi
Department Of Biochemistry I Yokohama City University School Of Medicine
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Kobayashi Yoshinori
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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Kamimura Hiroshi
Department Of Applied Physics . Faculty Of Science Tokyo University Of Science
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