Electronic Structure of Ultrathin Layered ZnSe/ZnS Superlattice
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The crystal structures ancl the band structures of ultrathin layered ZnSe/ZnSsuperlattices are calculated by the Valence Force Field model and the self-consistentpseudopotential method. The resulting crystal structures shc>w that the macroscopicelastic theory simulates strained structures of the present superlattices well. It isshown that some energy levels oscillate due to the sytnmetry with changing the layerthickness while strain causes another level splitting. Tlte possibility that theZnSe/ZnS superlattice on the GaAs substrate becxomes the strain-induced light-holegap material with decreasing the layer thickness is suggested. The structural stabilityand the band offset are also discussed.[strained structure, electrottic structure, ZnSe/ZnS superlt?-ttice, light-hole gap, ll offset, instabilityl
- 一般社団法人日本物理学会の論文
- 1990-03-15
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