Band Structure of Semiconductor Superlattices with Ultrathin Layers (GaAs)_n/(AIAs)_n with n=1,2,3,4
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概要
- 論文の詳細を見る
The band structures of ultrathin layered superlattices (GaAs)./ (AIAs). with n = l,2, 3 and 4 are calculated by the self-consistent pseudopotential method. In this calculalion a value of (Y in the Xcr approximation for the exchange-correlation potential is ad-justed so as to reproduce both band gaps of GaAs and AIAs. This reflects an effect ofthe self-energy correction. The resulting band structures and charge densities showthat upper valence band states of (GaAs)./ (AIAs). with n = l to 4 are approximatelyobtained by folding the valence bands of GaAs and AIAs, while that lower conduc-lion band states correspond to strong hybridization of folded bands of GaAs andAIAs. It is shown that the band gap of (GaAs)./(AIAs). is indirect, while those forn = 2 to 4 are direct and decrease with increasing n. This trend is consistent with recentexperimental results.
- 社団法人日本物理学会の論文
- 1985-12-15
著者
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Kamimura Hiroshi
Department Of Physics Faculty Of Science University Of Tokyo
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Nakayama Takashi
Department Of Biochemistry I Yokohama City University School Of Medicine
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Kamimura Hiroshi
Department Of Applied Physics . Faculty Of Science Tokyo University Of Science
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Nakayama Takashi
Department Of Physics Faculty Of Science University Of Tokyo
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