Tokuda Y | Mitsubishi Electric Corp. Hyogo Jpn

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概要

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著作論文

Optical 3R Wavelength Conversion by a combination of Self-pulsating DFB Laser and SOA-based Mach-Zehnder Interferometer
Selective Epitaxial Growth by Ultrahigh-Vacuum Chemical Vapor Deposition with Alternating Gas Supply of Si_2H_6 and Cl_2
Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping
First Operation of AlGaN Channel High Electron Mobility Transistors
First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation
Planar Avalanche Photodiode for Long-Haul Single-Photon Optic Fiber Communications
Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors
Carrier-Temperature and Wavelength-Switching in GaAs Single-Quantum-Well Baser Diode
On the Origin of Oval Defect with Nucleus on Epilayers Grown by Molecular Beam Epitaxy
Very High Frequency Self-Pulsation and Stable Optical Injection Locking for Well-Defined Multi-Electrode Distributed Feedback Lasers
Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films
Fabrication of Terahertz Planar Metamaterials Using a Super-Fine Ink-Jet Printer
A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies
Advantage of Shallow Trench Isolation over Local Oxidation of Silicon on Alignment Tolerance
Protection of Field Oxide in Trench Isolation against Contact Hole Etching to Improve Alignment Tolerance
Surface Defect Formation in Epitaxial Si Grown on Boron-Doped Substrates by Ultrahigh Vacuum Chemical Vapor Deposition(Structure and Mechanical and Thermal Properties of Condensed Matter)
Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition
Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition
Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs
Anomalous Gate Length Dependence of Threshold Voltage of Trench-Isolated Metal Oxide Semiconductor Field Effect Transistors
Narrow-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET)Isolated by an Ultra-Fine Trench
Electrical Characteristics of Ultra-Fine Trench Isolation Fabricated by a New Two-Step Filling Process
Step-Promoted Surface Reconstruction on Ga-Deposited (100) GaAs During Molecular Beam Epitaxy with Alternating Supply of Ga and As
Room-Temperature Self-Electrooptic Effects of GaAs/AlAs Asymmetric Coupled Quantum Wells
Photoluminescence of a Novel Hetero n-i-p-i Structure Incorporating Triple Quantum Wells

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