FURUKAWA Akihiko | Advanced Technology R&D Center, Mitsubishi Electric Corporation

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著作論文

An Electrostatic-Discharge (ESD) Protection Device with Low Parasitic Capacitance Utilizing a Depletion-Later-Extended Transistor (DET) for RF CMOS ICs
High performance 0.2μm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing
Advantage of Shallow Trench Isolation over Local Oxidation of Silicon on Alignment Tolerance
Design and Experimental Results of CMOS Low-Noise/Driver MMIC Amplifiers for Use in 2.4-GHz and 5.2-GHz Wireless Communications
2.4-GHz-Band CMOS RF Front-End Building Blocks at a 1.8-V Supply(Special Section on Analog Circuit Techniques and Related Topics)
Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs
Anomalous Gate Length Dependence of Threshold Voltage of Trench-Isolated Metal Oxide Semiconductor Field Effect Transistors
Narrow-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET)Isolated by an Ultra-Fine Trench

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