Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs
スポンサーリンク
概要
- 論文の詳細を見る
- 1998-09-07
著者
-
阿部 良夫
Department Of Materials Science Kitami Institute Of Technology
-
Tokuda Y
Mitsubishi Electric Corp. Hyogo Jpn
-
Tokuda Yasunori
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Tokuda Yasunori
Central Research Laboratory Mitsubishi Electric Corporation
-
Abe Yuji
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Abe Y
Mitsubishi Electric Corp. Hyogo Jpn
-
FURUKAWA Akihiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation
-
SHIOZAWA Katsuomi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
-
OISHI Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
-
Shiozawa K
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Tokuda Yasunori
Advanced R&d Technology Center Mitsubishi Electric Corporation
-
Oishi Toshiyuki
Information Technology R&d Center Mitsubishi Electric Corporation
-
Sugihara Kazuyoshi
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
-
Furukawa A
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Furukawa Akihiko
Advanced Technology R & D Center Mitsubishi Electric Corporation
-
Shiozawa Katsuomi
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Abe Yuji
Advanced R&d Technology Center Mitsubishi Electric Corporation
-
SHIOZAWA Katsuomi
Advanced Technology R & D Center, Mitsubishi Electric Corporation
-
OISHI Toshiyuki
Advanced Technology R & D Center, Mitsubishi Electric Corporation
関連論文
- C-6-3 化学量論的なTaN薄膜の(100)Si上での室温エピタキシャル成長(C-6.電子部品・材料,エレクトロニクス2)
- Ta-Zr合金による陽極酸化膜キャパシタの電気的特性に及ぼす熱処理温度と酸化膜厚低減の影響
- C-6-8 Ta-Zr合金による熱的に安定な高誘電率陽極酸化膜キャパシタの作製
- Al_3Ta陽極酸化膜キャパシタの作製とその耐熱性
- CPM2000-90 NbドープSrTiO_3薄膜の膜質に及ぼすMgO基板表面処理とポストアニールの影響
- CPM2000-83 薄いZrN/Zr2層膜を介在させたAl/ZrN/Zr/Siコンタクト系の熱的安定性
- CPM2000-76 導電性RhO2薄膜の電気特性に及ぼす熱処理の影響
- Optical 3R Wavelength Conversion by a combination of Self-pulsating DFB Laser and SOA-based Mach-Zehnder Interferometer
- CPM2000-72 WOx薄膜の形成過程とその電気及び光学特性
- Preparation of Hydrogen-Containing Ta_2O_5 Thin Films by Reactive Sputtering Using O_2 + H_2O Mixed Gas
- Effect of Substrate Temperature on Epitaxial Orientation of Rh Thin Films Sputtered on A-Plane Sapphire
- Control of Epitaxial Growth Plane of Rh Thin Films on A-Plane Sapphire by Sputter Deposition
- Oxidation and Morphology Change of Ru Films Caused by Sputter Deposition of Ta_2O_5 Films
- Effects of Sputtering Parameters on the Formation of Single-Oriented (002) Ti Film on Si
- Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process
- Epitaxial Growth of (001)Rh Thin Film on (001)MgO Single-Crystal Substrate by Sputtering
- Difference in Thermal Degradation Behavior of ZrO_2 and HfO_2 Anodized Capacitors
- Crystal Orientation Change of Ni Films by Sputtering in Ar-N_2 Mixed Gases
- Improvement of the Crystal Orientation and Surface Roughness of Ru Thin Films by Introducing Oxygen during Sputtering
- Realization of Sequential Epitaxial Growth of Cu/HfN Bilayered Films on (111) and (001) Si
- Epitaxial Ir Thin Film on (001) MgO Single Crystal Prepared by Sputtering
- Preparation of Low-Resistivity α-Ta Thin Films on (001) Si by Conventional DC Magnetron Sputtering
- Capacitor Property and Leakage Current Mechanism of ZrO_2 Thin Dielectric Films Prepared by Anodic Oxidation
- Highly Texrured (100) RuO_2/(001) Ru Multilayers Preparedly by Sputtering
- Electrical Properties of HfO_2 Thin Insulating Film Prepared by Anodic Oxidation
- C-Axis-Oriented Ru Thin Fillns Prepared by Sputtering in Ar and O_2 Gas Mixture : Surfaces, Interfaces, and Films
- Selective Epitaxial Growth by Ultrahigh-Vacuum Chemical Vapor Deposition with Alternating Gas Supply of Si_2H_6 and Cl_2
- An Electrostatic-Discharge (ESD) Protection Device with Low Parasitic Capacitance Utilizing a Depletion-Later-Extended Transistor (DET) for RF CMOS ICs
- Open-Tube Zn Diffusion Method for InGaAsP/InP Heterojunction Bipolar Transistors
- 超高真空系で作製したMo/(100)Si系のシリサイド形成初期過程
- Alメタライゼーション系におけるAl_12Mo/Mo積層膜の拡散バリヤ効果
- (200)TiN高配向膜上への(111)Al高配向成長に及ぼすAl_3Ti中間介在層の影響
- Fe and Al Concentrations in High Resistivity InP Layer Grown by Low-Temperature Liquid Phase Epitaxy
- Realization of Cu(111) Single-Oriented State on SiO_2 by Annealing Cu-Zr Film and the Thermal Stability of Cu-Zr/ZrN/Zr/Si Contact System
- Single-Oriented Growth of(111)Cu Film on Thin ZrN/Zr Bilayered Film for ULSI Metallization
- Study on Preparation Conditions of Single-Oriented(002)Zr Thin Films on n-(001)Si
- High performance 0.2μm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing
- 低化成電圧で作製したAl_3Hf陽極酸化膜キャパシタの熱劣化機構
- Al_3Hf金属間化合物の陽極酸化膜による高耐熱, 高信頼性薄膜キャパシタの検討
- Al_3Hf陽極酸化膜キャパシタの電気的特性と耐熱特性
- Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping
- First Operation of AlGaN Channel High Electron Mobility Transistors
- First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation
- Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
- Planar Avalanche Photodiode for Long-Haul Single-Photon Optic Fiber Communications
- Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors
- Carrier-Temperature and Wavelength-Switching in GaAs Single-Quantum-Well Baser Diode
- On the Origin of Oval Defect with Nucleus on Epilayers Grown by Molecular Beam Epitaxy
- Very High Frequency Self-Pulsation and Stable Optical Injection Locking for Well-Defined Multi-Electrode Distributed Feedback Lasers
- Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
- Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films
- Fabrication of Terahertz Planar Metamaterials Using a Super-Fine Ink-Jet Printer
- A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
- Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
- Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies
- Advantage of Shallow Trench Isolation over Local Oxidation of Silicon on Alignment Tolerance
- Protection of Field Oxide in Trench Isolation against Contact Hole Etching to Improve Alignment Tolerance
- Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
- Surface Defect Formation in Epitaxial Si Grown on Boron-Doped Substrates by Ultrahigh Vacuum Chemical Vapor Deposition(Structure and Mechanical and Thermal Properties of Condensed Matter)
- Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition
- Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition
- Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs
- Anomalous Gate Length Dependence of Threshold Voltage of Trench-Isolated Metal Oxide Semiconductor Field Effect Transistors
- Narrow-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET)Isolated by an Ultra-Fine Trench
- Electrical Characteristics of Ultra-Fine Trench Isolation Fabricated by a New Two-Step Filling Process
- Step-Promoted Surface Reconstruction on Ga-Deposited (100) GaAs During Molecular Beam Epitaxy with Alternating Supply of Ga and As
- Room-Temperature Self-Electrooptic Effects of GaAs/AlAs Asymmetric Coupled Quantum Wells
- Photoluminescence of a Novel Hetero n-i-p-i Structure Incorporating Triple Quantum Wells
- CPM2000-82 (001)Si上(111)Cu/(111)HfN/(002)Hf三層膜の連続単配向成長に及ぼすHf膜厚の影響
- Al_3Zr金属間化合物膜の陽極酸化とそれを応用した高信頼性薄膜キャパシタの作製
- Alメタライゼーション系へのAl_3Hf/Hf積層膜の拡散バリヤとしての適用
- Al_3Hf金属間化合物膜の結晶化過程と電気的特性
- n-(001)Si上への単配向Hf膜の作製条件の検討
- 反応性スパッタリング法によるRuO_2薄膜の作製とその電気特性
- Al-Si間におけるAl_3Zr/Zr積層膜の拡散バリヤ効果について
- Reliability of Source-to-Drain Non-Uniformly Doped Channel (NUDC)MOSFETs for Sub-Quarter-Micron Region
- Study on Preparation Conditions of High-Quality ZrN Thin Films Using a Low-Temperature Process
- Preparation of Oxygern-Containing Pt and Pt Oxide Thin Films by Reactive Sputtering and Their Characterization
- Formation Process and Electrical Property of RuO_2 Thin Films Prepared by Reactive Sputtering
- Initial Silicide Formation Process of Single Oriented (002) Hf Film on Si and Its Diffusion Barrier Property
- A Study on the Preparation Conditions of Single Oriented (002) Hf Film on n-(001) Si
- Surface Oxidation Behavior of TiN Film Caused by Depositing SrTiO_3 Film
- Application of Al_3Hf/Hf Bilayered Film as a Diffusion Barrier to Al Metallization System of Si Large-Scale Integration
- Preparation of RhO2 Thin Films by Reactive Sputtering and Their Characterizations
- Electrical Properties of Amorphous Rh Oxide Thin Films Prepared by Reactive Sputtering
- Thermal Stability of RuO_2 Thin Films and Effects of Annealing Ambient on Their Reduction Process
- Preparation of PtO and α-PtO_2 Thin Films by Reactive Sputtering and Their Electrical Properties
- 低化成電圧で作製したTa_2N陽極酸化膜キャパシタの耐熱特性
- 低化成電圧で作製したTa_2N陽極酸化膜キャパシタの熱安定性
- A Chemical Mechanism for Determining the Influence of Boron on Silicon Epltaxial Growth : Semiconductors
- CPM2000-71 Ta窒化物のTa-Al化合物膜への代替による薄膜キャパシタの容量低減の抑制効果
- Ta_2N陽極酸化膜キャパシタの耐熱要因と薄膜化の検討
- Ta_2N 陽極酸化膜キャパシタの耐熱性と酸化膜厚
- Effects of Substrate Temperature during Phosphor Layer Deposition on Luminance of SrS:Ce Blue-Green-Emitting Thin-Film Electroluminescent Devices
- Effects of Oxygen in CaS:Eu Active Layers on Emission Properties of Thin Film Electroluminescent Cells
- Electroluminescence in CaO:Eu Thin Film
- Distribution of Free Volume and Dielectric Relaxation due to Segmental Motion of Amorphous Chains in Chlorinated Poly(ethylene)
- Effect of the Distribution of Free Volume on the β Relaxation in Poly : Vinylidene Fluoride
- Mechanical Relaxation of Poly (Vinylidene Fluoride) and Copolymer of Vinylidene Fluoride and Tetrafluoroethylene in α and β Relaxation Regions
- Optical Phased Array Functions in Double-Layered Metallic Plate Systems with Artificially Modulated Slit Arrays