Furukawa Taisuke | Advanced Technology R&D Center, Mitsubishi Electric Co., 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan

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著作論文

Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies
Surface Defect Formation in Epitaxial Si Grown on Boron-Doped Substrates by Ultrahigh Vacuum Chemical Vapor Deposition(Structure and Mechanical and Thermal Properties of Condensed Matter)
Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition
Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition
A Chemical Mechanism for Determining the Influence of Boron on Silicon Epltaxial Growth : Semiconductors
Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition
A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition
Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition

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