Suzuki Yosuke | Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan

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概要

関連著者

Yoshiara Kiichi
Advanced Technology R&d Center Mitsubishi Electric Corp.
Tokuda Yasunori
Department Of Bioscience And Biotechnology Faculty Of Engineering Okayama University
Nanjo Takuma
Advanced Technology R&d Center Mitsubishi Electric Corporation
Suita Muneyoshi
Advanced Technology R&d Center Mitsubishi Electric Corp.
Yagyu Eiji
Advanced Technology R&d Center Mitsubishi Electric Corporation
Abe Yuji
Advanced R&d Technology Center Mitsubishi Electric Corporation
SHIOZAWA Katsuomi
Advanced Technology R & D Center, Mitsubishi Electric Corporation
OISHI Toshiyuki
Advanced Technology R & D Center, Mitsubishi Electric Corporation
Motoya Tsukasa
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
Imai Akihumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
Suzuki Yosuke
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan

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著作論文

Enhancement of drain current by an AlN spacer layer insertion in AlGaN/GaN high-electron-mobility transistors with Si-ion-implanted source/drain contacts

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