Electric-Field-Induced Fluorescence Quenching in a Metal-Insulator-Metal Device Composed of Flavin-Porphyrin Hetero-Type Langmuir-Blodgett Films
スポンサーリンク
概要
- 論文の詳細を見る
Photoinduced electron transfer processes in flavin-porphyrin hetero-type Langmuir-Blodgett films were investigated in terms of the electric-field-induced quenching of flavin fluorescence. The dependence of the fluorescence quenching on the applied voltage corresponded well with the rectifying photocurrent-voltage characteristics. The rate of fluorescence quenching, which is approximately 1 min-1, was found to be slow. It was concluded that the fluorescence quenching was attributed to reduced flavin molecules in the flavin monolayers generated by the electron transport process after the charge separation.
- Japan Society of Applied Physicsの論文
- 2004-02-15
著者
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Nishikawa Satoshi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Ueyama Satoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Isoda Satoru
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Hanazato Yoshio
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Akiyama Kouichi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Isoda Satoru
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Akiyama Kouichi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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