Time-Resolved Photoluminescence Study of Si/β-FeSi_2/Si Structures Grown by Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2004-07-01

著者

• SUEMASU Takashi

  Institute of Applied Physics, University of Tsukuba

• HASEGAWA Fumio

  Institute of Applied Physics, University of Tsukuba

• Li Cheng

  Center For Tsukuba Advanced Research Alliance University Of Tsukuba

• Ichida Masao

  Department Of Physics Osaka City University:department Of Applied Physics Nagoya University

• Ichida Masao

  Department Of Physics Konan University

• Ozawa Yoshinori

  Institute Of Applied Physics University Of Tsukuba

• TAKAUJI Motoki

  Institute of Applied Physics, University of Tsukuba

関連論文

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• Direct Growth of [100]-Oriented High-Quality β-FeSi_2 Films on Si(001) Substrates by Molecular Beam Epitaxy(Semiconductors)
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• Room Temperature 1.6 μm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi_2 Active Region
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