Intraband Energy Relaxation of Hot-Excitons Localized at a Stacking Disorder Plane in BiI_3

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概要

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• We study the intraband energy-relaxation of excitons localized at a stacking fault interf'acein a layered crystal BiI3 observing the ternporal behavior of the luminescence. The relaxationpro cesses in this systern are investigated by analyzing the time-resolved luminescence of a phononsideband which directly reflects the exciton distribution in the band. When the exciton isresonantly excited by a picosecond laser pulse, the exciton population reveals a 'hot' distributionat an early stage. The effective tetnperature decreases irmmediately according to the intrabandenergy-relaxation via the interaction with phonons, and after ?4O psec, the distribution almostreaches the thermal equilibritrna with the lattice. XVe obtain the consistent population relaxationtime (Tj) from the three-beana degenerate four-wave naixing signals.

• 社団法人日本物理学会の論文
• 1996-06-15

著者

• Kawai T

  Tokyo Univ. Sci. Tokyo

• KARASAWA Tsutomu

  Department of Physics, Graduate School of Science, Osaka City University

• Karasawa Tsutomu

  Department Of Physics Faculty Of Science Osaka City University

• Ichida Masao

  Department Of Physics Osaka City University:department Of Applied Physics Nagoya University

• Ichida Masao

  Department Of Physics Konan University

• KAWAI Taketoshi

  Department of Natural Science,Osaka Women's University

• Kawai Taketoshi

  Deparment Of Environmental Sciences Faculty Of Science Osaka Women's University

• Karasawa Tsutomu

  Department Of Applied Physics Nagoya University

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