Time-Resolved Photoluminescence Study of Si/$\beta$-FeSi2/Si Structures Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Si/$\beta$-FeSi2 particles/Si(001) and Si/$\beta$-FeSi2 film/Si(111) structures were grown by reactive deposition epitaxy (RDE) and by molecular beam epitaxy (MBE), and time-resolved photoluminescence (PL) was measured from 8 K to 150 K. Both samples exhibited the same PL peak wavelength of 1.54 μm at low temperatures, but the PL decay time of 1.54 μm emission was different, showing that the luminescence originated from different sources. A short decay time ($\tau\sim 10$ ns) was found to be dominant for the Si/$\beta$-FeSi2 particles/Si(001) at low temperatures. In contrast, the decay curve of the Si/$\beta$-FeSi2 film/Si(111) was well fitted by assuming a two-component model, with a short decay time ($\tau\sim 10$ ns) and a long decay time ($\tau\sim 100$ ns).
- 2004-07-01
著者
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Ichida Masao
Department Of Physics Konan University
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Ozawa Yoshinori
Institute Of Applied Physics University Of Tsukuba
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Takauji Motoki
Institute Of Applied Physics University Of Tsukuba
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Li Cheng
Center for Tsukuba Advanced Research Alliance
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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Suemasu Takashi
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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Ichida Masao
Department of Physics, Konan University, Kobe, Hyogo 658-8501, Japan
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Ozawa Yoshinori
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
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