Thermal Enhancement of 1.6 μm Electroluminescence from a Si-Based Light-Emitting Diode with $\beta$-FeSi2 Active Region

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概要

• 論文の詳細を見る

• The 1.6 μm electroluminescence (EL) of a Si-based light emitting diode (LED) with a $\beta$-FeSi2 particles active region was not observed at 300 K for injected current density up to 89 A/m2. However, the EL became detectable upon raising the measurement temperature above 330 K. The activation energy of the thermal enhancement was approximately 0.33 eV. The EL enhancement was considered to be attributed to an increased number of carriers that are thermally excited from the traps in silicon and injected into the $\beta$-FeSi2 particles.

• Japan Society of Applied Physicsの論文
• 2004-11-15

著者

• Ozawa Yoshinori

  Institute Of Applied Physics University Of Tsukuba

• SUEMASU Takashi

  Center for Tsukuba Advanced Research Alliance

• HASEGAWA Fumio

  Center for Tsukuba Advanced Research Alliance

• Li Cheng

  Center for Tsukuba Advanced Research Alliance

関連論文

• Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi_2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
• Thermal Enhancement of 1.6μm Electroluminescence from a Si-Based Light-Emitting Diode with β-FeSi_2 Active Region
• Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi_2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
• Time-Resolved Photoluminescence Study of Si/β-FeSi_2/Si Structures Grown by Molecular Beam Epitaxy
• Time-Resolved Photoluminescence Study of Si/$\beta$-FeSi2/Si Structures Grown by Molecular Beam Epitaxy
• Growth and Characterization of Si-Based Light-Emitting Diode with $\beta$-FeSi2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
• Thermal Enhancement of 1.6 μm Electroluminescence from a Si-Based Light-Emitting Diode with $\beta$-FeSi2 Active Region

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