Thermal Enhancement of 1.6μm Electroluminescence from a Si-Based Light-Emitting Diode with β-FeSi_2 Active Region

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2004-11-15

著者

• Li Cheng

  Center For Tsukuba Advanced Research Alliance University Of Tsukuba

• Ozawa Yoshinori

  Institute Of Applied Physics University Of Tsukuba

• SUEMASU Takashi

  Center for Tsukuba Advanced Research Alliance

• HASEGAWA Fumio

  Center for Tsukuba Advanced Research Alliance

関連論文

• Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi_2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
• Thermal Enhancement of 1.6μm Electroluminescence from a Si-Based Light-Emitting Diode with β-FeSi_2 Active Region
• Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi_2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
• Time-Resolved Photoluminescence Study of Si/β-FeSi_2/Si Structures Grown by Molecular Beam Epitaxy
• Time-Resolved Photoluminescence Study of Si/$\beta$-FeSi2/Si Structures Grown by Molecular Beam Epitaxy
• Growth and Characterization of Si-Based Light-Emitting Diode with $\beta$-FeSi2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
• Thermal Enhancement of 1.6 μm Electroluminescence from a Si-Based Light-Emitting Diode with $\beta$-FeSi2 Active Region

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