Epitaxial Growth and Magnetic Properties of Fe3Si/CaF2/Fe3Si Tunnel Junction Structures on CaF2/Si(111)
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概要
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We have successfully grown Fe3Si/CaF2/Fe3Si epitaxial magnetic tunnel junction structures with a 2-nm-thick CaF2 barrier layer on Si(111) substrates by molecular beam epitaxy (MBE). Magnetization vs magnetic field measurement using a superconducting quantum interference device (SQUID) showed a clear two-step hysteresis loop at room temperature. This means that the two ferromagnetic layers were fully separated by the CaF2 barrier layer.
- 2007-10-25
著者
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Harianto Teddy
Institute Of Applied Physics University Of Tsukuba
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Akinaga Hiro
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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