Growth of Nitride-Based Fe3N/AlN/Fe4N Magnetic Tunnel Junction Structures on Si(111) Substrates
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概要
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We have fabricated nitride-based Fe3N(30 nm)/AlN(2 nm)/Fe4N(25 nm) magnetic tunnel junctions (MTJs) structures on Si(111) substrates by molecular beam epitaxy of Fe3N layers onto AlN/$\alpha$-Fe/Si(111). The X-ray diffraction peaks of $\alpha$-Fe disappeared after the growth of the Fe3N layer, and those of Fe4N appeared instead. Rutherford backscattering spectroscopy (RBS) measurements revealed that the $\alpha$-Fe layer was nitrided to form the Fe4N layer. In the magnetization versus magnetic field curves measured at room temperature, a two-step hysteresis loop was clearly observed, meaning that the two ferromagnetic layers were separated by the 2-nm-thick AlN barrier layer.
- 2007-10-25
著者
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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Narahara Akari
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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