Layer-by-Layer Growth of GaN on GaAs Substrates by Alternate Supply of GaCl_3 and NH_3
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概要
- 論文の詳細を見る
Atomic layer epitaxy (ALE) of GaN on GaAs substrates was tried by alternate supply of GaCl_3 and NH_3, and the growth process was analyzed by the surface photo-absorption (SPA) method. When the GaN layers were grown on GaAs surface at 500℃, typical SPA signals indicating the layer-by-layer growths were observed. Change in the reflection intensity (SPA signal) after the GaCl_3 supply for the GaN growth was much slower than that of GaAs. This result indicates that the reaction between GaCl_3 and N or NH_3 was much slower than that between GaCl_3 and As or AsH_3. The crystallinity of GaN grown on (001) GaAs was almost amorphous. On the other hand, the GaN grown on (111) GaAs had a wurtzite structure and was a single crystal.
- 社団法人応用物理学会の論文
- 1996-06-15
著者
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Ishida Masahiko
Institute Of Materials Science University Of Tsukuba
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TSUCHIYA Harutoshi
Institute of Materials Science, University of Tsukuba
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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AKAMATSU Manabu
Institute of Materials Science, University of Tsukuba
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Tsuchiya Harutoshi
Institute Of Materials Science University Of Tsukuba
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Akamatsu Manabu
Institute Of Materials Science University Of Tsukuba:(present Address) Electronic Components Technol
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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TSUCHIYA Harutoshi
Institlite of Materials Science, University of Tsukuba
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