Difference between the Face Up and Face to Face Methods in AsH_3 Capless Annealing of LEC-GaAs
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概要
- 論文の詳細を見る
In order to determine why the AsH_3 capless annealing of ion implanted GaAs does not necessarily yield good reproducibility, conductive LEC-GaAs was annealed in AsH_3/H_2 flow with face up and face to face configurations. The surface carrier and EL2 concentrations decreased extensively when the wafer was annealed in the face up configuration, whereas they did not decrease for the face to face configuration. We found that a deep acceptor level, called HL2 or LPE-B, was introduced at the surface when the wafer was annealed in the face up configuration, even if a sufficient amount of As partial pressure was supplied. The introduction of this hole trap was more enhanced for an annealing in H_2 than in Ar.
- 社団法人応用物理学会の論文
- 1989-06-20
著者
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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Nishitsuji Mitsuru
Institute Of Materials Science University Of Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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