Strain State and Thermal Stability of Strained-Si-on-Insulator Substrates
スポンサーリンク
概要
- 論文の詳細を見る
The strain state and thermal stability of strained-Si-on-insulator (sSOI) substrates fabricated by the Smart Cut\textregistered technique were precisely analyzed by X-ray diffraction reciprocal space mapping and Raman spectroscopy. It was demonstrated that the strain was well maintained even after annealing at temperatures up to 1120 °C in spite of the thickness being larger than the critical thickness. The strain reduction of only 10% was observed at 1150 °C, but the surface smoothness with the RMS roughness below 0.2 nm and high crystal quality did not change. This indicates the high applicability of sSOI to the current Si processes.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-11-15
著者
-
Sawano Kentarou
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
-
Hoshi Yusuke
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
-
Yoshimi Makoto
Soitec Asia Inc.
-
Cayrefourcq Ian
Soitec
-
Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
-
Fukumoto Atsushi
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
-
Fukumoto Atsushi
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan
-
Hoshi Yusuke
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan
-
Yoshimi Makoto
SOITEC Asia, 3-3-1 Marunouchi, Chiyoda-ku, Tokyo 100-0005, Japan
-
Cayrefourcq Ian
SOITEC, Parc Technologique des Fontaines, Bernin 38926, Crolles Cedex, France
関連論文
- Comparison of Nonlocal and Local Magnetoresistance Signals in Laterally Fabricated Fe_3Si/Si Spin-Valve Devices
- Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates
- Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates
- A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
- Fabrication of Periodically Domain-Inverted AlGaAs Quasi-Phase-Matched Devices by GaAs/Ge/GaAs Sublattice Reversal Epitaxy
- Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
- Strain Effects of Ge Islands on Si_Ge_x/Si Quantum Well
- Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP_N_x Alloys: A Growth Interruption Study
- Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
- Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates
- High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy
- Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
- Second-Harmonic Generation from GaP/AlP Multilayers on GaP(111)Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave
- New Semiconductor Second-Harmonic Generator Based on Quasi-Phase-Matching for Cavity-Enhanced Fundamental Standing Wave
- Fast Lateral Transport of Excitons in a GaAs/AlGaAs Quantum Well
- Applications of Smart Cut^ Technologies to III-V Based Engineered Substrates
- Applications of Smart Cut^ Technologies to III-V Based Engineered Substrates
- High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111) B Substrates
- Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
- GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by Metalorganic Vapor Phase Epitaxy
- Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
- Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates ( Quantum Dot Structures)
- Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
- The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
- Formation of Cubic GaN on (111)B GaAs by Metal-Organic Vapor-Phase Epitaxy with Dimethylhydrazine
- Photoreflectance Study of Interface Roughness in Ge/SiGe Strained-Layer Heterostructures
- Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
- Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs
- Metal-Organic Vapor Phase Epitaxy Growth and Optical Study of GaAs/GaAs_P_x Strained-Barrier Single Quantum Well Structures
- Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
- Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels
- On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
- Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
- Optical Detection of Interdiffusion in Strained Si_Ge_x/Si Quantum Well Structures
- Photoluminescence of Si_Ge_x/Si Quantum Welts with Abrupt Interfaces Formed by Segregant-Assisted Growth
- Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100)
- Luminescence from Strained Si_Ge_x/Si Quantum Wells Grown by Si Molecular Beam Epitaxy
- Photogeneration and Transport of Carriers in Strained Si_Ge_x/Si Quantum Well Structures
- Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si_Ge_x/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy
- Band-Edge Luminescence of Strained Si_xGe_/Si Single Quantum Well Structures Grown on Si(111) by Si Molecular Beam Epitaxy
- Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
- Si/1ML-Ge/Si(001) Interface Structure Characterized by Surface X-Ray Diffraction and X-Ray Standing-Wave Method
- Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures
- Dependence of Band Offsets on Elastic Strain in GaAs/GaAs_P_x Strained-Layer Single Quantum Wells
- Compositional Latching in GaAs_P_x/GaAs Metalorganic Vapor Phase Epitaxy
- Premastered Optical Disk by Superresolution Using Rear Aperture Detection
- MBE-Related Surface Fegregation of Dopant Atoms in Silicon : Condensed Matter
- Coaxing the Maximum Performance out of an Ordinary Structured MO Disk
- Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
- Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices
- Fabrication of InGaAs Vertical-Cavity Surface-Emitting Laser by Molecular Beam Epitaxy and Its Room-Temperature Operation on (411)A GaAs Substrates
- Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates
- Photoluminescence of Erbium Implanted in SiGe
- Fabrication of GaAs Ultrafine Gratings by Single-Layer-Masked SiCl_4 Reactive Ion Etching
- Disappearance of the Breakdown of Quantum Hall Effects in Short Devices
- Optical Properties of Excitons in Semiconductor Quantum Wells
- Oscillator Strength of Excitons in InGaAs/GaAs Quantum Wells
- Nonlinear Optical Coefficient of AlAs Thin Film on GaAs Substrate
- Deposition of SiO_2 Films on Strained SiGe Layer by Direct Photo Chemical Vapor Deposition
- Strain Relaxation in MBE-Grown Si_Ge_x/Si(100) Heterostructures by Annealing
- Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb
- Temperature Dependence of Excitonic $\Gamma_{\text{c}}$–$\Gamma_{\text{v}}$ Transition Energies of GaxIn1-xP Crystals
- Built-in Electric Field Strength in InP/n^+-InP Determined by Photoellipsometry and Photoreflectance
- Development of SGOI and sSOI for High Volume Manufacturing
- Well Width Dependence of the Exciton Phonon Interaction in Semiconductor Quantum Wells
- Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy
- Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation
- Room-Temperature Observation of Size Effects in Photoluminescence of Si.Ge./Si Nanocolumns Prepared by Neutral Beam Etching
- Formation of Tensilely Strained Germanium-on-Insulator
- Acceptor-Like States in SiGe Alloy Related to Point Defects Induced by Si Ion Implantation
- Room-Temperature Electroluminescence from Ge Quantum Dots Embedded in Photonic Crystal Microcavities
- High-Quality-Factor Light-Emitting Diodes with Modified Photonic Crystal Nanocavities Including Ge Self-Assembled Quantum Dots on Silicon-On-Insulator Substrates
- Room-Temperature Observation of Size Effects in Photoluminescence of Si_Ge_/Si Nanocolumns Prepared by Neutral Beam Etching
- Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors
- Strain State and Thermal Stability of Strained-Si-on-Insulator Substrates
- Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
- New Structure of Polycrystalline Silicon Thin-Film Transistor with Germanium Layer in Source/Drain Regions for Low-Temperature Device Fabrication
- P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
- High-Quality-Factor Light-Emitting Diodes with Modified Photonic Crystal Nanocavities Including Ge Self-Assembled Quantum Dots on Silicon-On-Insulator Substrates
- Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
- Strain Relaxation and Surface Morphology of Ultrathin High Ge Content SiGe Buffers Grown on Si(001) Substrate
- Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
- Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates
- Channel Width Dependence of Mobility in Ge Channel Modulation-Doped Structures
- Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy