P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
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概要
- 論文の詳細を見る
In this paper, we report, for the first time, the fabrication and characterization of p-type doped-channel Si/SiGe field-effect transistors (DCFETs) using uniformly doping and delta doping in the SiGe conducting channel. For the same device parameters and process conditions, the $\delta$-DCFET is shown having much smaller leakage current and larger current drivability than uniformly doped-channel FET (u-DCFET). This is because the additional V-shaped potential formed well by the $\delta$-doped layer in the SiGe layer offers an excellent channel hole confinement and the larger forward turn-on voltage promises a linear operation over a wider dynamic range than that of u-DCFET.
- Japan Society of Applied Physicsの論文
- 2003-12-01
著者
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Wu San
Department Of Electronic Engineering Cheng Shiu University
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Lin Yu
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Chang Shoou
Institute Of Microelectronics & Department Of Electrical Engineering Center For Micro/nano Scien
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Koh Shinji
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Lin Yu
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1 Ta Hseuh Road, Tainan, Taiwan, R.O.C.
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Koh Shinji
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
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Lin Yu
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
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Wu San
Department of Electronics Engineering, Cheng Shiu University, 840 Sheng Ching Rd., Neau-Song, Kaohsiung, Taiwan, R.O.C.
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Shiraki Yasuhiro
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
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Chang Shoou
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1 Ta Hseuh Road, Tainan, Taiwan, R.O.C.
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