Effect of Annealing Process on Trap Properties in High-k/Metal Gate n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors through Low-Frequency Noise and Random Telegraph Noise Characterization

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概要

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• In this research, trap properties in n-channel metal--oxide--semiconductor field-effect transistors (MOSFETs) with different annealing sequences have been studied on the basis of low-frequency (1/f) noise and random telegraph noise (RTN) analyses. The 1/f noise results indicate that the source of the drain current fluctuation is electron trapping. The higher trap density in the devices annealed before the TaN layer causes serious noise and lower trap energy in RTN results. The substitution mechanism explains that the increment of defects is due to the additional nitrogen atoms in HfO<inf>2</inf>. On the contrary, fewer defects in the devices annealed after the TaN layer are due to the effect of passivation in the TiN layer. The defect in HfO<inf>2</inf>is the source of trapping/detrapping; thus, fewer defects cause the decrement of the fluctuation and the increment of the drain current. We believe that this process has a potential to remove defects in advanced MOSFETs.

• 2013-04-25

著者

• Wu San

  Department Of Electronic Engineering Cheng Shiu University

• Chen Jone

  Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit

• Chang Shoou

  Department Of Electrical Engineering National Cheng Kung University

• Chang Yee

  Department Of Material Science Engineering National Cheng Kung University

• Cheng Osbert

  Central R&D Division, United Microelectronics Corporation (UMC), Hsinchu 30077, Taiwan, R.O.C.

• Huang Po

  Department of Electrical Engineering, National Chi Nan University, No. 1 University Rd. Puli 545, Taiwan

• Chiu Hsu

  Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

• Tsai Shih

  Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

• Lai Chien

  Central R&D Division, United Microelectronics Corporation, Tainan 74145, Taiwan

• Hsu Chia

  Central R&D Division, United Microelectronics Corporation, Tainan 74145, Taiwan

• Hsu Chia

  Central R&D Division, United Microelectronics Corporation, Tainan 74145, Taiwan

• Lai Chien

  Central R&D Division, United Microelectronics Corporation, Tainan 74145, Taiwan

• Cheng Osbert

  Central R&D Division, United Microelectronics Corporation, Tainan 74145, Taiwan

• Huang Po

  Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

• Wu San

  Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 83347, Taiwan

• Chen Jone

  Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

• Chang Shoou

  Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

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