The Impact of Gate-to-Source Tunneling Current on the Characterization of Metal-Oxide-Semiconductor Field-Effect Transistor's Hot-Carrier Reliability
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
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Chen Jone
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
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TSAO Chih-Pin
Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung Universi
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ONG T.-C.
Taiwan Semiconductor Manufacturing Company
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Tsao Chih-pin
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
関連論文
- The Impact of Gate-to-Source Tunneling Current on the Characterization of Metal-Oxide-Semiconductor Field-Effect Transistor's Hot-Carrier Reliability
- Effect of Annealing Process on Trap Properties in High-k/Metal Gate n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors through Low-Frequency Noise and Random Telegraph Noise Characterization
- The Impact of Gate-to-Source Tunneling Current on the Characterization of Metal-Oxide-Semiconductor Field-Effect Transistor's Hot-Carrier Reliability