The Impact of Gate-to-Source Tunneling Current on the Characterization of Metal-Oxide-Semiconductor Field-Effect Transistor's Hot-Carrier Reliability

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概要

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• Drain current ($I_{\text{d}}$) degradation due to Fowler-Nordheim (FN) stress and $V_{\text{g}}=V_{\text{d}}$ stress were investigated in 0.15 μm n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) and p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs). When pMOSFETs reach the lifetime under $V_{\text{g}}=V_{\text{d}}$ stress, the damage resulting from gate-to- source tunneling current is not negligible in comparison with the damage caused by channel hot carriers. $I_{\text{d}}$ degradation models of pMOSFETs under FN stress and $V_{\text{g}}=V_{\text{d}}$ stress were established. According to the $I_{\text{d}}$ degradation models, the impact of gate-to-source tunneling current on the result of hot-carrier reliability testing is discussed.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-04-15

著者

• Chen Jone

  Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit

• ONG T.-C.

  Taiwan Semiconductor Manufacturing Company

• Tsao Chih-pin

  Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit

• Tsao Chih-Pin

  Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.

関連論文

• The Impact of Gate-to-Source Tunneling Current on the Characterization of Metal-Oxide-Semiconductor Field-Effect Transistor's Hot-Carrier Reliability
• Effect of Annealing Process on Trap Properties in High-k/Metal Gate n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors through Low-Frequency Noise and Random Telegraph Noise Characterization
• The Impact of Gate-to-Source Tunneling Current on the Characterization of Metal-Oxide-Semiconductor Field-Effect Transistor's Hot-Carrier Reliability

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