Impact of SiN on Performance in Novel Complementary Metal–Oxide–Semiconductor Architecture Using Substrate Strained-SiGe and Mechanical Strained-Si Technology

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概要

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• In this paper, we report the fabrication of a SiN-induced mechanically tensile-strained Si n-type metal–oxide–semiconductor field-effect transistor (nMOSFET) and a compressively strained SiGe p-type MOSFET to improve the drive current of both n- and pMOSFETs simultaneously, and we integrated both devices on the same wafer. Individual MOSFET performance can be adjusted independently to their optimum levels due to the separation process for two types of devices. It is found that n- and pMOSFETs in the novel complementary metal–oxide–semiconductor (CMOS) architecture had a better performance, not only a higher drain-to-source saturation current but also a higher transconductance with wide gate voltage swing, than the Si devices used as a control. Although a degraded performance was found in the pMOSFET with a SiN layer, this effect can be minimized by increasing the Ge content in the Si1-xGex conducting channel, thus demonstrating that the flow has a great flexibility for developing a next-generation high-performance CMOS devices.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-05-15

著者

• Wu San

  Department Of Electronic Engineering Cheng Shiu University

• Chang Shoou

  Institute Of Microelectronics & Department Of Electrical Engineering Center For Micro/nano Scien

• Huang Kuang

  Department Of Electrical Engineering National Sun Yat-sen University

• Lin Chun

  Department Of Chemistry Florida Institute Of Technoloy

• Lin Chung

  Department of Electronics Engineering, Cheng Shiu University, 840, Sheng Ching Rd., Neau-Song, Kaohsiung 833, Taiwan

• Wu Chung

  Department of Electronics Engineering, Cheng Shiu University, 840, Sheng Ching Rd., Neau-Song, Kaohsiung 833, Taiwan

• Kang Ting

  Department of Electronics Engineering, Cheng Shiu University, 840, Sheng Ching Rd., Neau-Song, Kaohsiung 833, Taiwan

• Wu Chung

  Department of Electronic Engineering, Cheng Shiu University, Niaosong, Kaohsiung 833, Taiwan, R.O.C.

• Huang Kuang

  Department of Electronics Engineering, Cheng Shiu University, 840, Sheng Ching Rd., Neau-Song, Kaohsiung 833, Taiwan

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