Characterization of Oxide Tarps in 28 nm p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise
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概要
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In this study, the impact of embedded tip-shaped SiGe in the source/drain (S/D) region on individual trap behavior such as activation energy and depth from the SiO2/Si interface of the 28 nm p-type metal--oxide--semiconductor field-effect transistors (pMOSFETs) has been investigated on the basis of drain current random telegraph noise (RTN). The purpose of implementing tip-shaped SiGe S/D is to further increase channel stress because it provides a closer proximity of embedded SiGe to the channel. By characterizing RTN, we found that the pMOSFETs underwent uniaxial compressive strain that was provided by tip-shaped SiGe S/D, and the trap energy level being close to the channel valence band resulted in the trap located close to the Si/SiO2 interface, as compared with the control device without embedded SiGe S/D.
- 2012-02-25
著者
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Wu San
Department Of Electronic Engineering Cheng Shiu University
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Chang Shoou
Institute Of Microelectronics & Department Of Electrical Engineering Center For Micro/nano Scien
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Wang Bo
Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
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Lu Yu
Department of Electronic Engineering, Cheng Shiu University, Niaosong, Kaohsiung 833, Taiwan, R.O.C.
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Huang Chien
Department of Electronic Engineering, Cheng Shiu University, Niaosong, Kaohsiung 833, Taiwan, R.O.C.
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Lin Yu
Central R&D Division, United Microelectronics Corporation (UMC), Hsinchu 30077, Taiwan, R.O.C.
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Lee Kun
Central R&D Division, United Microelectronics Corporation (UMC), Hsinchu 30077, Taiwan, R.O.C.
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Cheng Osbert
Central R&D Division, United Microelectronics Corporation (UMC), Hsinchu 30077, Taiwan, R.O.C.
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Cheng Osbert
Central R&D Division, United Microelectronics Corporation (UMC), Hsinchu 30077, Taiwan, R.O.C.
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Lin Yu
Central R&D Division, United Microelectronics Corporation (UMC), Hsinchu 30077, Taiwan, R.O.C.
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Wu San
Department of Electronic Engineering, Cheng Shiu University, Niaosong, Kaohsiung 833, Taiwan, R.O.C.
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Lee Kun
Central R&D Division, United Microelectronics Corporation (UMC), Hsinchu 30077, Taiwan, R.O.C.
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