Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching
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概要
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Reactive ion etching (RIE) of GaN has been performed using BCl3 and additives Ar, CH4, and N2 to BCl3 plasma. The etching rate, surface roughness and the etch profile have been investigated. When BCl3/Ar was used as the RIE plasma source with 200 W RF power and 60 mTorr pressure, the highest etching rates of 505 Å/min and 448 Å/min were obtained for n- and p-GaN, respectively. It was found that the addition of CH4 and N2 to the BCl3 plasma would result in significant changes of the etching results, such as the etching rate and surface morphology. It was also found that with the proper etching parameter, the mirrorlike facet of GaN can be obtained using BCl3/Ar/CH4/N2 by RIE.
- 2001-04-30
著者
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Lin I
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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CHI Gou
Department of Physics, National Central University
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SHEU Jinn
Department of Physics, National Central University
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Chang Shoou
Institute Of Microelectronics & Department Of Electrical Engineering Center For Micro/nano Scien
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Su Yan
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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Chen Chin
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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Sheu Jinn
Department of Physics, National Central University, Chung-Li, Taiwan, R.O.C.
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Chi Gou
Department of Physics, National Central University, Chung-Li, Taiwan, R.O.C.
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Chang Shoou
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.
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Su Yan
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.
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CHEN Chin
Institute of Food and Agricultural Sciences, University of Florida
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