Investigation of Impact Ionization in Strained-Si nMOSFETs
スポンサーリンク
概要
- 論文の詳細を見る
- 2007-09-19
著者
-
CHANG Shoou
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
-
Wu San-lein
Department Of Electronic Engineering Cheng Shiu University
-
Chang Shoou
Institute Of Microelectronics & Department Of Electrical Engineering Center For Micro/nano Scien
-
KANG Ting-Kuo
Department of Electronic Engineering, Cheng Shiu University
-
SA Yu-Huan
Department of Electronic Engineering, Cheng Shiu University
-
HUANG Po-Chin
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung Universi
-
Huang Po-chin
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
-
Kang Ting-kuo
Department Of Electronic Engineering Cheng Shiu University
-
Chang Shoou
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
-
Sa Yu-huan
Department Of Electronic Engineering Cheng Shiu University
関連論文
- P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
- A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
- Low Temperature Activation of Mg-Doped GaN in O_2 Ambient : Semiconductors
- Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching
- Investigation of Transport Mechanism for Strained Si n Metal-Oxide-Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate
- Investigation of Impact Ionization in Strained-Si nMOSFETs
- Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- Effects of Interfacial Oxide Layer for the Ta_2O_5 Capacitor After High-Temperature Annealing
- Surface Characteristics, Optical and Electrical Properties on Sol-Gel Synthesized Sn-Doped ZnO Thin Film
- Tolerance Design of Passive Filter Circuits Using Genetic Programming(Electronic Circuits)
- Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- Analysis of Electron Tunneling Components in p+ Poly-Gate p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors from Direct Tunneling Region to Fowler–Nordheim Region
- Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching
- GaN Schottky Barrier Photodetectors with a \beta-Ga2O3 Cap Layer
- Characterization of Oxide Tarps in 28 nm p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise
- Impact of SiN on Performance in Novel Complementary Metal–Oxide–Semiconductor Architecture Using Substrate Strained-SiGe and Mechanical Strained-Si Technology
- Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
- Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
- Characterization of Oxide Traps in 28 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise
- Evaluation of Interface Property and DC Characteristics Enhancement in Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Stress Memorization Technique
- Investigation of Trap Properties in High-k/Metal Gate p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis
- Self-Heating p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Reliability Monitoring of Negative-Bias Temperature Instability
- Hole Confinement and $1/ f$ Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
- GaN Schottky Barrier Photodetectors with a β-Ga_2O_3 Cap Layer
- Investigation of Trap Properties in High-k/Metal Gate p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis
- Characterization of Oxide Traps in 28 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise (Special Issue : Solid State Devices and Materials)
- Optimized Si-Cap Layer Thickness for Tensile-Strained-Si/ Compressively Strained SiGe Dual-Channel Transistors in 0.13 μm Complementary Metal Oxide Semiconductor Technology
- Investigation of Transport Mechanism for Strained Si n Metal–Oxide–Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate
- Defect properties of high-k/metal-gate metal–oxide–semiconductor field-effect transistors determined by characterization of random telegraph noise