Huang Po-chin | Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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概要
- HUANG Po-Chinの詳細を見る
- 同名の論文著者
- Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universitの論文著者
関連著者
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Wu San-lein
Department Of Electronic Engineering Cheng Shiu University
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Huang Po-chin
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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Chang Shoou-jinn
Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na
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Kang Ting-kuo
Department Of Electronic Engineering Cheng Shiu University
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Sa Yu-huan
Department Of Electronic Engineering Cheng Shiu University
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Cheng Osbert
Central R&D Division, United Microelectronics Corporation (UMC), Hsinchu 30077, Taiwan, R.O.C.
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Wu San-Lein
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan
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Huang Po-Chin
Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan
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Wang Bo-Chin
Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan
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Lu Yu-Ying
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan
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Huang Chien-Wei
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan
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Lin Yu-Min
Central R&D Division, United Microelectronics Corporation (UMC), Tainan 744, Taiwan
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Wu Chung-Yi
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan
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CHANG Shoou
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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Chang Shoou
Institute Of Microelectronics & Department Of Electrical Engineering Center For Micro/nano Scien
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KANG Ting-Kuo
Department of Electronic Engineering, Cheng Shiu University
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SA Yu-Huan
Department of Electronic Engineering, Cheng Shiu University
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HUANG Po-Chin
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung Universi
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Chang Shoou
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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Kang Ting-Kuo
Department of Electronic Engineering, Cheng Shiu University, No. 840, Chengching Rd., Niaosong Township, Kaohsiung County 833, Taiwan, R.O.C.
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Kang Ting-Kuo
Department of Electronic Engineering, Cheng Shiu University, Niaosong Township, Kaohsiung County 833, Taiwan, R.O.C.
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Wu Chung-Yi
Department of Electronic Engineering, Cheng Shiu University, Niaosong, Kaohsiung 833, Taiwan
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Wang Bo-Chin
Department of Electronic Engineering, Cheng Shiu University, Niaosong Township, Kaohsiung County 833, Taiwan, R.O.C.
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Huang Po-Chin
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Wu San-Lein
Department of Electronic Engineering, Cheng Shiu University, Niaosong Township, Kaohsiung County 833, Taiwan, R.O.C.
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Sa Yu-Huan
Department of Electronic Engineering, Cheng Shiu University, No. 840, Chengching Rd., Niaosong Township, Kaohsiung County 833, Taiwan, R.O.C.
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Cheng Osbert
Central R&D Division, United Microelectronics Corporation (UMC), Tainan 744, Taiwan
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Lin Yu-Min
Central R&D Division, United Microelectronics Corporation (UMC), Tainan 744, Taiwan
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Lee Kun-Hsien
Central R&D Division, United Microelectronics Corporation (UMC), Tainan 744, Taiwan
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Lee Kun-Hsien
Central R&D Division, United Microelectronics Corporation (UMC), Tainan 744, Taiwan
著作論文
- Investigation of Impact Ionization in Strained-Si nMOSFETs
- Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- Characterization of Oxide Traps in 28 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise
- Characterization of Oxide Traps in 28 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise (Special Issue : Solid State Devices and Materials)