Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
スポンサーリンク
概要
- 論文の詳細を見る
The impact ionization phenomenon in strained-SiGe p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) with a single quantum well (SQW) is investigated. From the universal relationship between impact ionization efficiency and the electric field in the pinch-off region, the strain-induced increase in the impact ionization efficiency of strained-SiGe pMOSFETs with different Ge contents can be attributed to a decrease in band gap energy, taking into account the increased mean free path of the hole in the SQW-SiGe channel.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
-
Wu San-lein
Department Of Electronic Engineering Cheng Shiu University
-
Chang Shoou-jinn
Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na
-
Huang Po-chin
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
-
Kang Ting-kuo
Department Of Electronic Engineering Cheng Shiu University
-
Kang Ting-Kuo
Department of Electronic Engineering, Cheng Shiu University, Niaosong Township, Kaohsiung County 833, Taiwan, R.O.C.
-
Wang Bo-Chin
Department of Electronic Engineering, Cheng Shiu University, Niaosong Township, Kaohsiung County 833, Taiwan, R.O.C.
-
Wu San-Lein
Department of Electronic Engineering, Cheng Shiu University, Niaosong Township, Kaohsiung County 833, Taiwan, R.O.C.
関連論文
- Two-Step Etching Mechanism of Ag-Si Nanostructure with Various Ag Nanoshape Depositions
- High Brightness InGaN/GaN LEDs with ESD Protection
- High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO_2 Layer
- Transparent TiN Electrodes in GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors(Semiconductors)
- P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy
- On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors
- Noise Analysis of Nitride-based MOS-HFETs with Photo-chemical Vapor Deposition SiO_2 Gate Oxide in the Linear and Saturation Region
- Homoepitaxial ZnSe MIS Photodetectors Using SiO_2 and BST Insulator
- Improved Performance of 2, 3-Dibutoxy-1, 4-Phenylene Vinylene Based Polymer Light-Emitting Diodes by Thermal Annealing
- ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes : Semiconductors
- Investigation of Impact Ionization in Strained-Si nMOSFETs
- Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- AlGaN Ultraviolet Metal-Semiconductor-Metal Photodetectors with Low-Temperature-Grown Cap Layers
- Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- Practical Passive Filter Synthesis Using Genetic Programming(CAD, Analog Circuit and Device Technologies)
- A Novel Fabrication of p--n Diode Based on ZnO Nanowire/p-NiO Heterojunction
- Crystal Polarity Effects on Magnesium Implantation into GaN Layer
- Effects of Phosphorus Implantation on the Activation of Magnesium Doped in GaN
- ZnO Nanowire-Based CO Sensors Prepared at Various Temperatures
- Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- The Bias-Crystallization Mechanism on Structural Characteristics and Electrical Properties of Zn-In-Sn-O Film
- AlGaN Metal–Semiconductor–Metal Photodetectors with Low-Temperature AlN Cap Layer and Recessed Electrodes
- The Output Power Enhancements of GaN-Based Blue Light-Emitting Diodes with Highly Reflective Ag/Cr/Au Trilayer Omnidirectional Reflective Electrode Pads
- Analysis of Electron Tunneling Components in p+ Poly-Gate p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors from Direct Tunneling Region to Fowler–Nordheim Region
- Efficiency Droop Characteristics in InGaN-Based Near Ultraviolet-to-Blue Light-Emitting Diodes
- Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors
- InGaN Metal–Semiconductor–Metal Photodiodes with Nanostructures
- Microstructural Characteristics of InGaZnO Thin Film : Using an Electrical Current Method
- GaN Schottky Barrier Photodetectors with a \beta-Ga2O3 Cap Layer
- AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Low-Temperature-Grown Cap Layers
- n-UV+Blue/Green/Red White Light Emitting Diode Lamps
- Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
- Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO2 Layer
- Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
- Effect of Substrate Properties on Luminescence of White ZnGa2O4 Phosphor
- Indium–Tin-Oxide Metal–Insulator–Semiconductor GaN Ultraviolet Photodetectors Using Liquid-Phase-Deposition Oxide
- Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector
- InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
- AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer
- Noise Analysis of Nitride-Based Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors with Photo-Chemical Vapor Deposition SiO2 Gate Oxide in the Linear and Saturation Regions
- High-Responsivity InGaAs/InP Quantum-Well Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition
- Optoelectronic Properties of Thermally Evaporated ZnO Films with Nanowalls on Glass Substrates
- High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
- InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers
- Characterization of Oxide Traps in 28 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise
- Investigation of Trap Properties in High-k/Metal Gate p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis
- GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer
- Self-Heating p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Reliability Monitoring of Negative-Bias Temperature Instability
- GaN Schottky Barrier Photodetectors with a β-Ga_2O_3 Cap Layer
- Investigation of Trap Properties in High-k/Metal Gate p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis
- Characterization of Oxide Traps in 28 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise (Special Issue : Solid State Devices and Materials)
- High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
- Optoelectronic Properties of Thermally Evaporated ZnO Films with Nanowalls on Glass Substrates
- Defect properties of high-k/metal-gate metal–oxide–semiconductor field-effect transistors determined by characterization of random telegraph noise