InGaN Metal–Semiconductor–Metal Photodiodes with Nanostructures
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概要
- 論文の詳細を見る
InGaN self-assembled nanostructures have been prepared by growth interruption during metal-organic chemical vapor deposition (MOCVD) growth. With a 12 s growth interruption, we successfully formed InGaN nanostructures with a typical lateral size of 25 nm and an average height of 4.1 nm. The nanostructure density was approximately $2\times 10^{10}$ cm-2. In contrast, much larger InGaN nanostructures were obtained without growth interruption. InGaN metal-semiconductor-metal (MSM) photodiodes with and without nanostructures were also fabricated. Although the dark currents were approximately the same for all detectors, we could achieve a much larger photocurrent-to-dark current contrast ratio from samples with small self-assembled InGaN nanostructures.
- 2004-02-15
著者
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WANG Chun-Kai
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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TSAI Tzong-Yow
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University
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Su Wei
Key Laboratory Of Biomedical Polymers Of Ministry Of Education Department Of Chemistry Wuhan Univers
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Ji Liang-wen
Institute Of Electro-optical And Materials Science National Formosa University
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Zhong Jing-chang
Key Laboratory Of Semiconductor Lasers Changchun University Of Science And Technology
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Chang Shoou-jinn
Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na
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Chuang Ricky
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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HUNG Shang-Chao
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University
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Fang Te-hua
Department Of Mechanical Engineering Southern Taiwan University
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Su Yan-kuin
Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio
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Zhong Jing-Chang
Key Laboratory of Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, PRC
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Ji Liang-Wen
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 701, ROC
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Chuang Ricky
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 701, ROC
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Wang Chun-Kai
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 701, ROC
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Su Wei
Key Laboratory of Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, PRC
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Chang Shoou-Jinn
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 701, ROC
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Hung Shang-Chao
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 701, ROC
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Tsai Tzong-Yow
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 701, ROC
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