Integrated SiO2/SiON/SiO2 Thermo-Optical Switch Based on the Multimode Interference Effect
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概要
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We propose the design of an integrated SiO2/SiON/SiO2 $2 \times 2$ multimode interference (MMI) based optical switch. The entire switching mechanism is based on the thermo-optic (TO) effect of SiO2/SiON dielectric layers. The heating power of ${\sim}0.89$ W is required to switch the optical beam from bar to cross state. The experimental crosstalk of the switch as determined between the cross and bar states is in the excess of 12 dB. Furthermore, the rise and fall times of approximately 314 μs are also experimentally realized for this device.
- 2010-04-25
著者
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Chuang Ricky
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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Liao Zhen-liang
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Hsu Mao-teng
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Mao-Teng Hsu
Institute of Microelectronics, Department of Electrical Engineering, Advanced Optoelectronic Technology Center (AOTC), and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
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Ricky W.
Institute of Microelectronics, Department of Electrical Engineering, Advanced Optoelectronic Technology Center (AOTC), and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
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Zhen-Liang Liao
Institute of Microelectronics, Department of Electrical Engineering, Advanced Optoelectronic Technology Center (AOTC), and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
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