GaN Schottky Barrier Photodetectors with a \beta-Ga2O3 Cap Layer
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概要
- 論文の詳細を見る
GaN Schottky barrier UV photodetectors (PDs) with a \beta-Ga2O3 cap layer realized by furnace oxidation of GaN epitaxial layer were fabricated and characterized. With the cap layer inserted, it was found that the reverse leakage current could be reduced by more than 4 orders of magnitude and the UV-to-visible rejection ratio increased by 21 times. When compared with the conventional GaN PDs, incorporating an additional \beta-Ga2O3 cap layer helps to reduce the noise level and at the same time achieve a larger detectivity.
- 2012-11-25
著者
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Wu San-lein
Department Of Electronic Engineering Cheng Shiu University
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Chang Shoou-jinn
Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na
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Chuang Ricky
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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Chuang Ricky
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
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Huang Zhen-Da
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
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Weng Wen-Yin
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
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Chiu Chiu-Jung
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
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HUANG Zhen-Da
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University
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WENG Wen-Yin
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University
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CHIU Chiu-Jung
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University
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