Transparent TiN Electrodes in GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors(Semiconductors)
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-06-15
著者
-
Chang C‐s
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
-
Su Y‐k
National Cheng Kung Univ. Tainan Twn
-
CHANG Shoou-Jinn
Institute of Electro-Optical Science and Engineering, Center for Micro/Nano Science and Technology,
-
Chiou Y‐z
Department Of Electronics Engineering Southern Taiwan University Of Technology
-
CHANG Chia-Sheng
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
-
SU Yan-Kuin
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
-
CHIOU Yu-Zung
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University
-
LIN Yi-Chao
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University
-
CHEN Jone
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung Universi
-
LIU Sen-Hai
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung Universi
-
CHEN Chin-Hsiang
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung Universi
-
Chang Chia-sheng
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
-
Chiang C‐i
Materials R&d Center Chung Shan Inst. Sci. & Technol. Taoyuan Twn
-
Lin Yi-chao
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
-
Chen J
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
-
Chang S‐j
Department Of Electrical Engineering National Cheng-kung University
-
Chen Jone
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
-
Liu Sen-hai
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
-
Chang Shoou-jinn
Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na
-
Cherng Y‐t
Chung‐shan Inst. Sci. And Technol. Tao‐yuan Twn
-
Su Yan-kuin
Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio
関連論文
- Two-Step Etching Mechanism of Ag-Si Nanostructure with Various Ag Nanoshape Depositions
- High Brightness InGaN/GaN LEDs with ESD Protection
- Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector
- High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO_2 Layer
- High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO_2 Layer
- InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO_2 Layers
- InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
- Transparent TiN Electrodes in GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors(Semiconductors)
- P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy
- On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors
- Improved Stopband of the Dual-Mode Ring Bandpass Filter Using Periodic Complementary Spilt-Ring Resonators(Microwaves, Millimeter-Waves)
- Spurious Suppression of a Parallel Coupled Microstrip Bandpass Filter with Simple Ring EBG Cells on the Middle Layer(Microwaves, Millimeter-Waves)
- Fabrication and Micro-Photoluminescence Investigation of Mg-Doped Gallium Nitride Nanorods
- Beryllium-Implanted P-Type GaN With High Carrier Concentration : Semiconductors
- Electron Field Emission Characteristics of Planar Field Emission Array with Diamondlike Carbon Electron Emitters
- Interface Modification in Organic Thin Film Transistors
- Anomalous Hot-Carrier-Induced On-Resistance Degradation in High-Voltage LDMOS Transistors
- Mechanism and Reliability Index of Hot-Carrier Degradation in LDMOS Transistors
- Hot-Carrier Reliability Improvement in Submicron High-Voltage DMOS Transistors
- Ultraviolet Random Laser Action of Nano-structured Zinc Oxide
- Ultraviolet Lasing of Sol-Gel Derived Zinc Oxide Polycrystalline Films
- Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
- High Field Effects and Methods Useful for Transferring Atoms in Scanning Tunneling Microscope
- Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
- Simulation and Fabrication of InGaP/Al_Ga_As/GaAs Oxide-Confined
- InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure
- Improvement of AlGaInP Multiple-Quantum-Well Light-Emitting Diodes by Modification of Ohmic Contact Layer
- AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice
- Temperature Dependence of Barrier Height and Energy Bandgap in Au/n-GaSb Schottky Diode
- SiO_2/InP Structure Prepared by Direct Photo-Chemical Vapor Deposition Using Deuterium Lamp and Its Applications to Metal-Oxide-Semiconductor Field-Effect Transistor
- Low Temperature Metal Induced Crystallization of Amorphous Silicon by Nano-Gold-Particles
- A High-Temperature Thermodynamic Model for Metalorganic Vapor Phase Epitaxial Growth of InGaN
- AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer
- n-UV+BLUE/Green/Red White Light Emitting Diode Lamps
- GaN-Based Light Emitting Diodes with Si-Doped In_Ga_N/GaN Short Period Superlattice Current Spreading Layer
- Effects of High-Resistivity, Low-Temperature Layer in Transient Capacitance Measurements of GaAs n-i-p Structures
- Effect of Mobility Degradation and Supply Voltage on NBTI Induced Drain Current Degradation
- Enhancement of Electron Emission Characteristics of Platform-shaped Mo Emitters by Diamond-like Carbon Coatings
- Noise Analysis of Nitride-based MOS-HFETs with Photo-chemical Vapor Deposition SiO_2 Gate Oxide in the Linear and Saturation Region
- Homoepitaxial ZnSe MIS Photodetectors Using SiO_2 and BST Insulator
- The annealing effects of GaN MIS capacitors with photo-CVD oxide layers
- Improved Performance of 2, 3-Dibutoxy-1, 4-Phenylene Vinylene Based Polymer Light-Emitting Diodes by Thermal Annealing
- InGaN Metal-Semiconductor-Metal Photodiodes with Nanostructures
- High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
- ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes : Semiconductors
- Effects of Redox Treatment on Diamondlike Carbon Coated Mo Substrates
- Improved performance of DB-PPV based Polymer Light Emitting Diodes by Thermal Annealing
- Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
- GaInNAs/GaAs p-i-n Photodetector with Multiquantum Well Structure
- Effect of Compositions and Surface Treatment on the Jetting Stability and Color Uniformity of Ink-Jet Printed Color Filter
- Influence of UV-Curable Compositions and Rib Properties on Ink-Jet-Type Color Filter Performance
- Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- AlGaN Ultraviolet Metal-Semiconductor-Metal Photodetectors with Low-Temperature-Grown Cap Layers
- Deposition of SiO_2 Films on Strained SiGe Layer by Direct Photo Chemical Vapor Deposition
- Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- Effects of Interfacial Oxide Layer for the Ta_2O_5 Capacitor After High-Temperature Annealing
- Practical Passive Filter Synthesis Using Genetic Programming(CAD, Analog Circuit and Device Technologies)
- The Low-Temperature Characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs Broken-Gap Interband Tunneling Structures
- The Low-Temperature Characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs Broken-Gap Interband Tunneling Structure
- A Novel Fabrication of p--n Diode Based on ZnO Nanowire/p-NiO Heterojunction
- Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow
- Crystal Polarity Effects on Magnesium Implantation into GaN Layer
- Effects of Phosphorus Implantation on the Activation of Magnesium Doped in GaN
- Characteristics and Improvement in Hot-Carrier Reliability of Sub-Micrometer High-Voltage Double Diffused Drain Metal–Oxide–Semiconductor Field-Effect Transistors
- ZnO Nanowire-Based CO Sensors Prepared at Various Temperatures
- Bistable Resistive Switching Characteristics of Poly(2-hydroxyethyl methacrylate) Thin Film Memory Devices
- Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- The Bias-Crystallization Mechanism on Structural Characteristics and Electrical Properties of Zn-In-Sn-O Film
- Mechanism and Modeling of On-Resistance Degradation in n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors
- AlGaN Metal–Semiconductor–Metal Photodetectors with Low-Temperature AlN Cap Layer and Recessed Electrodes
- The Output Power Enhancements of GaN-Based Blue Light-Emitting Diodes with Highly Reflective Ag/Cr/Au Trilayer Omnidirectional Reflective Electrode Pads
- Efficiency Droop Characteristics in InGaN-Based Near Ultraviolet-to-Blue Light-Emitting Diodes
- Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors
- InGaN Metal–Semiconductor–Metal Photodiodes with Nanostructures
- Microstructural Characteristics of InGaZnO Thin Film : Using an Electrical Current Method
- GaN Schottky Barrier Photodetectors with a \beta-Ga2O3 Cap Layer
- AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Low-Temperature-Grown Cap Layers
- n-UV+Blue/Green/Red White Light Emitting Diode Lamps
- Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
- Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- An Investigation on Hot-Carrier Reliability and Degradation Index in Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors
- High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO2 Layer
- Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
- Effect of Substrate Properties on Luminescence of White ZnGa2O4 Phosphor
- Indium–Tin-Oxide Metal–Insulator–Semiconductor GaN Ultraviolet Photodetectors Using Liquid-Phase-Deposition Oxide
- Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector
- InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
- AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer
- Noise Analysis of Nitride-Based Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors with Photo-Chemical Vapor Deposition SiO2 Gate Oxide in the Linear and Saturation Regions
- High-Responsivity InGaAs/InP Quantum-Well Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition
- Investigation of Hot-Carrier-Induced Degradation Mechanisms in p-Type High-Voltage Drain Extended Metal–Oxide–Semiconductor Transistors
- Effect of Gate Voltage on Hot-Carrier-Induced On-Resistance Degradation in High-Voltage n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors
- Optoelectronic Properties of Thermally Evaporated ZnO Films with Nanowalls on Glass Substrates
- High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
- InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers
- Characteristics of Lateral Diffused Metal--Oxide--Semiconductor Transistors with Lightly Doped Drain Implantation through Gradual Screen Oxide
- GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer
- Characteristics of Sub-50 nm NAND Flash Devices with Various Self-Aligned Shallow Trench Isolation Depths
- Impact of Mobility Degradation and Supply Voltage on Negative-Bias Temperature Instability in Advanced p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- Characteristics of Sub-50 nm NAND Flash Devices with Various Self-Aligned Shallow Trench Isolation Depths (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)