The Low-Temperature Characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs Broken-Gap Interband Tunneling Structures
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概要
- 論文の詳細を見る
The characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures are investigated. In addition to the main negative differential resistance peaks, kinks or small peaks can be clearly seen, especially at low temperature. The effects of the heavy-hole states are expected to play an important role. Here, a $\mbi{k} \cdotp \mbi{p}$ model incorporating the coupling effects of the heavy-hole states is used. It is found that the kinks and small peaks are the results of heavy-hole coupling. Furthermore, the electron distribution in the InAs emitter also contributes to the phenomena observed in the low-temperature characteristics.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Chen J.
Department Of Systems Engineering And Naval Architecture National Taiwan Ocean University
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Wang Y.H.
Dept.of Materials Science and Engineeringn National Tsing Hua Univ.
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Chen J
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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Chen J.
Department Of Electrical Engineering Da-yeh University
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Cho A
Department Of Electrical Engineering National Cheng-kung University
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Wang Yeong
Department Of Electronical Engineering National Cheng Kung University
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Liu Meng
Department Of Electrical Engineering National Cheng-kung University
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Houng Mau
Department Of Electrical Engineering National Cheng-kung University
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Cho Alfred
Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan, ROC
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Chen J.
Department Of Civil Engineering National Chung-hsing University
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