Effects of High-Resistivity, Low-Temperature Layer in Transient Capacitance Measurements of GaAs n-i-p Structures
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-10-15
著者
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Chen J
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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Chen Nie
Department Of Electrophysics National Chiao Tung University
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CHEN Jenn
Department of Electrophysics, National Chiao Tung University
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WANG Pai
Department of Electrophysics, National Chiao Tung University
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Wang Pai
Department Of Electrophysics National Chiao Tung University
関連論文
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- On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors
- Effects of High-Resistivity, Low-Temperature Layer in Transient Capacitance Measurements of GaAs n-i-p Structures
- ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes : Semiconductors
- The Low-Temperature Characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs Broken-Gap Interband Tunneling Structures
- The Low-Temperature Characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs Broken-Gap Interband Tunneling Structure