Negative Differntial Resistance in GaAs Delta-Doping Tunneling Diodes
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概要
- 論文の詳細を見る
In this letter, we show GaAs double-barrier quantum well homostructure diodes. The barrier is induced by the δn^+-i-δp^+-i-δn^+ or δn^+-i-δp^+-i-δp^+-i-δn^+ structure grown by the delta-doping technique. The coduction band diagram was simulation with the out-diffusion effect of delta-doping layers taken into consideration. The current-voltage characteristics exhibit the expected N-type negative differential resistance due to the resonant tunneling effect. The room-temperature peak-to-valley current ratios are 1.5 and 1.9 for the two studied devices, respectively.
- 社団法人応用物理学会の論文
- 1991-02-15
著者
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Su Yan
Department Of Electrical Engineering National Cheng Kung University
-
Wang Yeong
Department Of Electronical Engineering National Cheng Kung University
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Su Yan
Department Of Electronical Engineering National Cheng Kung University
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WANG Ruey
Department of Electrical Engineering, National Cheng Kung University
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Wang Ruey
Department Of Electronical Engineering National Cheng Kung University
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