Investigation of Hot-Carrier-Induced Degradation Mechanisms in p-Type High-Voltage Drain Extended Metal–Oxide–Semiconductor Transistors

概要

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Hot-carrier-induced degradation in p-type drain extended metal–oxide–semiconductor (DEMOS) devices is investigated. The gate voltage biased at the second substrate current peak produces the most device degradation. The generation of interface state ($\Delta N_{\text{it}}$) in the channel region, $\Delta N_{\text{it}}$ in the drift region under poly-gate, and negative oxide-trapped charge ($\Delta N_{\text{ot}}$) in the drift region outside poly-gate are responsible for device parameter degradation. $\Delta N_{\text{it}}$ in the channel region causes threshold voltage and maximum transconductance degradation. $\Delta N_{\text{ot}}$ in the drift region outside poly-gate leads to the increase of linear drain current ($I_{\text{dlin}}$) at the beginning of stress. $\Delta N_{\text{it}}$ in the drift region under poly-gate results in the turnaround behavior of $|I_{\text{dlin}}|$ shift as the stress time is longer.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2009-04-25