Characteristics and improvement in hot-carrier reliability of sub-micrometer high-voltage double diffused drain metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)

スポンサーリンク

概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Wu Kuo-ming

  Taiwan Semiconductor Manufacturing Company

関連論文

• Anomalous Hot-Carrier-Induced On-Resistance Degradation in High-Voltage LDMOS Transistors
• Mechanism and Reliability Index of Hot-Carrier Degradation in LDMOS Transistors
• Characteristics and improvement in hot-carrier reliability of sub-micrometer high-voltage double diffused drain metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)
• Hot-Carrier Reliability Improvement in Submicron High-Voltage DMOS Transistors
• Mechanism and Modeling of On-Resistance Degradation in n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors
• An Investigation on Hot-Carrier Reliability and Degradation Index in Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors
• Investigation of Hot-Carrier-Induced Degradation Mechanisms in p-Type High-Voltage Drain Extended Metal–Oxide–Semiconductor Transistors
• Effect of Gate Voltage on Hot-Carrier-Induced On-Resistance Degradation in High-Voltage n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors

スポンサーリンク