Mechanism and Modeling of On-Resistance Degradation in n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors

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概要

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• In this study, on-resistance ($R_{\text{on}}$) degradation induced by hot-carrier injection in n-type lateral diffused metal–oxide–semiconductor transistors with shallow trench isolation (STI) in the drift region is investigated. $R_{\text{on}}$ unexpectedly decreases at the beginning of stress, although $R_{\text{on}}$ increases as the stress time becomes longer. Experimental data and results of technology computer-aided-design simulations reveal that hot-hole injection and trapping at the STI corner closest to the channel is responsible for the $R_{\text{on}}$ reduction. The damage caused by hot-electron injection at the STI edge closest to the drain is responsible for the $R_{\text{on}}$ increase. An $R_{\text{on}}$ degradation model including the effect of hole trapping and interface trap generation is also discussed and verified with experimental data.

• 2009-04-25

著者

• Wu Kuo-ming

  Taiwan Semiconductor Manufacturing Company

• LIU C.

  Taiwan Semiconductor Manufacturing Company

• Chen Jone

  Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers

• Chen Shiang-yu

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• Tian Kuen-shiuan

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• Chen Shiang-Yu

  Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan

• Tian Kuen-Shiuan

  Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan

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