Impact of Mobility Degradation and Supply Voltage on Negative-Bias Temperature Instability in Advanced p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
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概要
- 論文の詳細を見る
Negative-bias temperature instability (NBTI) was investigated in advanced p-channel metal–oxide–semiconductor field-effect transistors fabricated with dual gate oxide thickness. Results indicate that the mobility degradation resulting from NBTI-induced interface state generation is significant in the device with an ultra thin gate oxide. Models to relate NBTI-induced threshold voltage shift and drain current (linear-region $I_{\text{dlin}}$, and saturation-region $I_{\text{dsat}}$) degradation were established. According to the $I_{\text{dsat}}$ degradation model, the impact of supply voltage on $I_{\text{dsat}}$ degradation for a fixed amount of NBTI-induced damage can be predicted.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2007-04-30
著者
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Chen Jone
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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YANG Dao-Hong
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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Wu Shien-Yang
Platform-1 Division/R&D, Taiwan Semiconductor Manufacturing Company, Hsinchu 300, Taiwan
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Yang Dao-Hong
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
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Lin Chih-Yung
Platform-1 Division/R&D, Taiwan Semiconductor Manufacturing Company, Hsinchu 300, Taiwan
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