AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-15
著者
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Su Y‐k
National Cheng Kung Univ. Tainan Twn
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CHANG Shoou-Jinn
Institute of Electro-Optical Science and Engineering, Center for Micro/Nano Science and Technology,
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Chen S‐c
Industrial Technol. Res. Inst. Hsinchu Twn
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Chen Shih-chang
Advanced Module Technology Division Taiwan Semiconductor Manufacturing Company
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SU Yan-Kuin
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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LIU Chun-Hsing
Department of Electronic and Computering Engineering, Nan Jeon Institute of Technology
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WEI Sun-Chin
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University
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CHEN Shih-Chih
2Institute of Electronics and Information Engineering, National Yunlin University of Science and Tec
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LIAW Uang-Heay
Department of Electronic Engineering, Chin-Min College
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TSAI Tzong-Yow
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University
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HSU Tzu-Hsuan
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University
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Chang S‐j
Department Of Electrical Engineering National Cheng-kung University
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