Effect of Compositions and Surface Treatment on the Jetting Stability and Color Uniformity of Ink-Jet Printed Color Filter
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-12-15
著者
-
Chang Chi-jung
Applied Chemistry Division Union Chemical Laboratories Industrial Technology Research Institute
-
Wu Feng-mei
Applied Chemistry Division Union Chemical Laboratories Industrial Technology Research Institute
-
Chen Kevin
Opto-electronics & Systems Laboratories Industrial Technology Research Institute
-
Chang S‐j
Department Of Electrical Engineering National Cheng-kung University
-
CHANG Chi-Jung
Department of Chemical Engineering, Feng Chia University
-
CHANG Shinn-Jen
Applied Chemistry Division, Union Chemical Laboratories, Industrial Technology Research Institute
-
HSU Mei-Wen
Applied Chemistry Division, Union Chemical Laboratories, Industrial Technology Research Institute
-
CHIU Wanda
Opto-Electronics & Systems Laboratories, Industrial Technology Research Institute
関連論文
- High Brightness InGaN/GaN LEDs with ESD Protection
- Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector
- High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO_2 Layer
- High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO_2 Layer
- InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO_2 Layers
- InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
- Transparent TiN Electrodes in GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors(Semiconductors)
- P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy
- On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors
- Electron Field Emission Characteristics of Planar Field Emission Array with Diamondlike Carbon Electron Emitters
- AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer
- n-UV+BLUE/Green/Red White Light Emitting Diode Lamps
- GaN-Based Light Emitting Diodes with Si-Doped In_Ga_N/GaN Short Period Superlattice Current Spreading Layer
- Enhancement of Electron Emission Characteristics of Platform-shaped Mo Emitters by Diamond-like Carbon Coatings
- Noise Analysis of Nitride-based MOS-HFETs with Photo-chemical Vapor Deposition SiO_2 Gate Oxide in the Linear and Saturation Region
- Homoepitaxial ZnSe MIS Photodetectors Using SiO_2 and BST Insulator
- The annealing effects of GaN MIS capacitors with photo-CVD oxide layers
- Improved Performance of 2, 3-Dibutoxy-1, 4-Phenylene Vinylene Based Polymer Light-Emitting Diodes by Thermal Annealing
- InGaN Metal-Semiconductor-Metal Photodiodes with Nanostructures
- High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
- ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes : Semiconductors
- Effects of Redox Treatment on Diamondlike Carbon Coated Mo Substrates
- Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
- Effect of Compositions and Surface Treatment on the Jetting Stability and Color Uniformity of Ink-Jet Printed Color Filter
- Influence of UV-Curable Compositions and Rib Properties on Ink-Jet-Type Color Filter Performance
- Deposition of SiO_2 Films on Strained SiGe Layer by Direct Photo Chemical Vapor Deposition
- Effect of Compositions and Surface Treatment on the Jetting Stability and Color Uniformity of Ink-Jet Printed Color Filter
- Influence of UV-Curable Compositions and Rib Properties on Ink-Jet-Type Color Filter Performance